| 摘要 |
PURPOSE:To reduce a cell area and prevent an increase of a wiring resistance in a wordline by a method wherein a polysilicon film diffused with an impurity in high density is made a diffusion source, emitter layers being diffused and a wiring being formed by the polysilicon between the emitter layers. CONSTITUTION:The polysilicon film 8 diffused with the impurity in high density is formed between an emitter 5b of the first multiemitter transistor Tr5 and an emitter 6b of the second multiemitter transistor Tr6 constituting a memory cell in the semiconductor IC device, and the emitters 5b and 6b are connected therebetween each other by the film 8 made as the diffusion source. On the other hand, collectors 5d, 6d are formed directly by diffusion, and the collector 5d of the Tr5 on one side and a base 6c of the Tr6 on the other side therebetween and the wordline 11 in the memory cell respectively are connected by Al wirings 9, 10 low in wiring resistance. Thus, the cell area is contived to be reduced and the wiring resistance of the wordline 11 is prevented from rising. |
