| 摘要 |
PURPOSE:To obtain a MOSFET whose insulation characteristic between interconnections has been enhanced by a method wherein an insulating-film pattern whose etching speed is much smaller than that of an interlayer insulating film is formed between a gate electrode and the interlayer insulating film. CONSTITUTION:A thermal oxide film 7 is formed; after that, an insulating-film pattern 17 whose etching speed is much smaller as compared with that of an interlayer insulating film is formed so as to be connected to the end part of a gate electrode to a sidewall and to one part of an N<+> source-drain region. The interlayer insulating film 8 is formed on the surface of a P-type silicon substrate 1, the insulating-film pattern 17 and the gate electrode 3 and on the thermal oxide film 7. In addition, an aluminum interconnection layer 12 is connected to the N drain-source region 6 via a contact hole formed in the interlayer insulating film 8; the surface of the interlayer insulating film 8 and the like is covered with a passivation film 13. Thereby, it is possible to obtain a MOSFET which is provided with a highly insulating property between the gate electrode and the aluminum interconnection. |
