发明名称 THIN FILM MULTILAYER WIRING BOARD
摘要 PURPOSE:To enable an acid-resistant metal layer which brings heat-resistant polyimide into close contact with a Cu conductor to be enhanced in moisture resistance at a high temperature so as to enhance a thin film multilayer wiring board in reliability by a method wherein a TiW nitride layer is provided onto the TiW surface of a conductor composed of TiW/Cu/TiW in contact with polyimide or air. CONSTITUTION:A first conductor layer composed of TiW nitride/TiW/Cu/TiW is formed on a ceramic board 1, where a lower contact layer TiW 2 is 500Angstrom in thickness, a Cu 3 is formed as thick as 5mum, an upper contact layer TiW 4 is 500Angstrom thick, and a TiW nitride 5 is formed thereon as thick as 1500Angstrom . An insulating layer 6 of heat- resistant polyimide resin provided with a window is formed 20mum thick. As the underside of a second conductor layer comes into contact with polyimide resin, a TiW nitride 7 is provided to keep the second conductor layer high in adhesion and resistance to moisture. A TiW 8, a Cu 9, a TiW 10, and a TiW nitride 11 are formed the same as the first conductor layer. By this setup, conductor layers are excellent in moisture resistance, adhesion to an insulating layer, and resistance to acid, so that a thin film multilayer wiring board used for a thin film hybrid IC or the like can be enhanced in performance.
申请公布号 JPH04196390(A) 申请公布日期 1992.07.16
申请号 JP19900322636 申请日期 1990.11.28
申请人 FUJITSU LTD 发明人 OZAWA TAKASHI
分类号 H05K1/09;H01L23/12;H05K3/46 主分类号 H05K1/09
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