发明名称 GESCHALTETE STROMQUELLE.
摘要 A static current source has at least two MOS transistors switched in cascade, branched across a MOS transistor current source. There are at least two branches having at least one current source transistor (T12) in common. Each branch has at least one switching transistor (T13,T14) operating at the same time as a current source transistor. The branch transistors (T13,T14) are driven at the saturation level. The gate voltages (VGS13,VGS14) of the transistors are switched between two constant voltages so that one of the transistors conducts. The voltage is held constant independently of the drain voltages at the common junction of these transistor representing their source node. The disadvantageous discharge of the parasitic capacitive (Cp) is avoided.
申请公布号 DE3779666(D1) 申请公布日期 1992.07.16
申请号 DE19873779666 申请日期 1987.01.28
申请人 SIEMENS AG, 8000 MUENCHEN, DE 发明人 KOCH, DR., RUDOLF, W-8025 UNTERHACHING, DE
分类号 G05F3/24;H02M3/155;(IPC1-7):H02M3/155 主分类号 G05F3/24
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