| 摘要 |
PURPOSE:To make it possible to secure the high resistance dimensions adequately only with a change in the mask data by a method wherein a first region is not formed on and around a connection opening which is an opening to connect first and second wiring layers that is formed continuously with the second wiring layer and the area on and around the connection opening forms a second region. CONSTITUTION:Care should be taken not to form a high-density impurity layer 7 around a connection opening 9 which connects first and second wiring layers formed in a layer insulating film 6. What is concerned about with such a structure is the contact resistance of the connection opening 9, however, a contact is secured since As is diffused upward from an impurity layer 5a. At that time, the contact resistance is hundreds OMEGA to 1kOMEGA or around, which is a negligibly small value compared with the resistance value of a high resistance part 8 which is several GOMEGA to several TOMEGA. By using a resist pattern which is formed when a low resistance part 7 is formed by ion implantation as a mask, an impurity is prevented from entering the high resistance part 8. About the high resistance part 8, only a change in the mask data is required and no change is required in a processing schedule. Consequently, the adequate high resistance dimensions are secured. |
