| 摘要 |
PURPOSE:To prevent invasion of aluminum and titanium by opening a contact hole, sequentially forming polycrystalline silicon film and titanium alloy film, conducting the heat treatment under the inert gas atmosphere and then forming thereon an aluminium film. CONSTITUTION:A contact hole is opened and a polycrystalline silicon film 8 and a titanium alloy film 9 are formed sequentially thereon. Next, when the heat treatment is conducted under the inert gas atmosphere, a titanium silicide film 10 is formed through reaction between a part of the polycrystalline silicon film 8 and the titanium alloy film 9. After an aluminium alloy film 11 is formed thereon, a wiring may be formed by sequentially etching the aluminium alloy film 11, titanium silicide film 10 and polycrystalline silicon film 8 with the photoetching technology. Thereby, since the polycrystalline silicon film 8 is left under the highly reactive titanium silicide film, invasion of titanium from the titanium silicide film 10 and that of aluminium from the aluminium alloy film can sufficiently be prevented. |
