| 摘要 |
PURPOSE:To precisely etch by a method wherein, after an X-ray having a specific wavelength is irradiated on a SiO2 removed portion which is formed on a substrate, the substrate is wet-etched to remove a portion irradiated by the X-ray. CONSTITUTION:An X-ray 4 between a wavelength 1 to 100nm is irradiated on an SiO2 film 2 by a desired pattern, and a region of an SiO2 film 2A in which it is easy to etch with the same form as the pattern is formed on a part of the SiO2 film 2. Accordingly, by soaking this in etching liquid, this is selectively etched to form a desired pattern without using a mask for the wet-etching. Thus, as the mask for the etching is not used, contamination caused from a mask material is avoided and further a semiconductor material of a foundation is not damaged due to the wet-etching. |
