| 摘要 |
PURPOSE:To raise a placing density by pressing anisotropically conductive paste to the side end of a laminated semiconductor chip, and incorporating an insulating plate having a through hole electrode to be electrically connected oppositely to an electrode led to the side end of the chip through the paste. CONSTITUTION:After an insulating plate such as a ceramic plate 15 is brought in parallel with the side end of a laminated semiconductor chip 13 coated with anisotropically conductive paste 14, the periphery of the plate 15 is clamped by a clamping band 16, heated in a state that pressure is applied to the paste 14, and the paste 14 is cured to complete a laminated semiconductor element. A through hole electrode 15a of the plate 15 opposed to the side end of the chip 13 is electrically connected to the electrode 11a of a semiconductor chip 11 opposed thereto, and the chip 13 is electrically connected to a brazing terminal 15b. |
