发明名称 NONVOLATILE SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To eliminate the current consumption of a nonvolatile semiconductor device by burning off a transistor by means of a feedback circuit when a nonvolatile semiconductor element is turned on. CONSTITUTION:When this nonvolatile semiconductor device makes ordinary operations, a program selection control signal 4 is at an L level and, when a nonvolatile semiconductor element 2 is turned on, an H-level switch signal is outputted from a feedback circuit 3, since potential V2 becomes a GND level. When the H-level signal is outputted, a transistor 1 is turned off and no electric current flows to the element 2, since the signal becomes the gate potential V1 of a transistor 1. In other words, the transistor 1 is turned off by means of the feedback circuit when the nonvolatile semiconductor element is turned on. Therefore, the power consumption of this nonvolatile semiconductor device can be eliminated.</p>
申请公布号 JPH04195798(A) 申请公布日期 1992.07.15
申请号 JP19900321794 申请日期 1990.11.26
申请人 SEIKO EPSON CORP 发明人 MARUYAMA AKIRA
分类号 G11C17/00;G11C16/02;G11C16/06 主分类号 G11C17/00
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