| 摘要 |
<p>Disclosed is an improved method of leveling the laminated surface of a semiconductor substrate, which method permits the exact controlling of the eating-out of the lamination on the semiconductor substrate by detecting the sudden change of the amount of the gas resulting from the chemical reaction of the materials of the different layers with particular selected elements of surrounding plasma gas, thus assuring the reproducibility of leveled semiconductor substrate surface. <IMAGE></p> |
