| 摘要 |
1,146,603. Mounting of semi-conductor devices; circuit assemblies. TELEFUNKEN PATENTVERWERTUNGS-G.m.b.H. 1 April, 1966 [17 April, 1965], No. 14551/66. Headings H1K and H1R. In a method of producing a solid-state circuit, a plurality of semi-conductor chips 1, 1<SP>1</SP>, each containing one or more active devices and, if desired, passive devices, beneath a passivation layer 2, 2<SP>1</SP>, are provided with apertures 3, 3<SP>1</SP> which engage registering studs 10 on a baseplate 11. The chips are mounted on the baseplate and a quantity of glass solder 15 is applied to the free faces of the chips and to the spaces between them. A permanent support 16 is bonded to the chips by the glass solder 15 in a heating step, after which the base-plate 11 is removed and conductors and passive components are applied as required by evaporation or dusting on to the surface formed by the passivation layers 2, 2<SP>1</SP> and the glass solder lying flush therewith (Fig. 4, not shown). The semi-conductor chips (Fig. 1b, not shown) may comprise high resistance polycrystalline material having therein monocrystalline regions constituting devices such as planar transistors, and the apertures in the chips are formed by etching. The baseplate 11 preferably comprises the same polycrystalline material as the chips 1, 1<SP>1</SP> and is provided with an insulating, e.g. oxide, layer 12; a further polycrystalline layer is then applied, from which the studs 10 are formed by etching. The support 16 may also comprise the same polycrystalline material as the chips; if this material is Si, a suitable glass solder 15 is leadboron silicate glass. A multiple-device semiconductor wafer may be applied to the baseplate before being divided into individual chips. |
