| 摘要 |
<p>PURPOSE:To manufacture submicron gate holes on a large area substrate with good mass productivity by removing particulates so as to form minute holes after exposing a mask layer consisting of resists and particulates. CONSTITUTION:A cathode electrode 4 is formed on an insulated substrate 1, and an insulation layer 5 and a gate electrode layer 6 are in order laminated on the cathode electrode 4, a mask layer 9 consisting of a resist 8 and particulates 7 is formed on the gate electrode layer 6 and the mask layer 9 is exposed to remove the particulates 7 from the mask layer 9 so as to form minute holes 10 on the resist 8. Next, the gate electrode layer 6 and the insulated layer 5 are etched from minute holes 10 to form the gate electrode layer 6 and holes 11, and the resist 8 is removed so as to form a separation layer 12 on the surface of the gate electrode layer 6. Next, an emitter material 13 is evaporated toward the hole inside so as to form an emitter 14 inside the holes, and the separation layer 12 is removed so as to remove the emitter material 13 covering the separation layer. Thereby, micron gate holes can be manufactured on a large area substrate with good mass productivity.</p> |
