发明名称 Compound semiconductor integrated circuit.
摘要 <p>A semiconductor integrated circuit is used to obtain a driving signal for driving a load. The semiconductor integrated circuit includes a compound semiconductor substrate (SUB), a logic part (20) including at least a first field effect transistor (1, 22) formed on the compound semiconductor substrate for outputting a first signal, and a driver part (30) including at least a second field effect transistor (2, 31) formed on the compound semiconductor substrate and outputting the first signal through the second field effect transistor as a driving signal. The first field effect transistor (1, 22) is a self-aligned type field effect transistor having a first gate electrode (G22) and first and second impurity regions (41, 42) formed in self-alignment to the first gate electrode. The second field effect transistor (2, 31) is a non-self-aligned type field effect transistor having a second gate electrode (G31) and third and fourth impurity regions (44, 45) formed in non-self-alignment to the second gate electrode. &lt;IMAGE&gt;</p>
申请公布号 EP0494642(A1) 申请公布日期 1992.07.15
申请号 EP19920100155 申请日期 1992.01.07
申请人 FUJITSU LIMITED 发明人 NAKAYAMA, YOSHIRO
分类号 H03K19/0952;H01L27/02;H01L27/06;H01L27/095 主分类号 H03K19/0952
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