| 摘要 |
PURPOSE:To keep the detection characteristic and improve reliability by setting a difference of thermal expansion coefficients of an element and a support to a value lower than the predetermined value on the occasion of fixing a detection element to a supporting means such as a substrate of a semiconductor radiation detector. CONSTITUTION:A CdTe crystal 10 is used as a radiation detecting element, electrodes 12, 14 are formed at both surfaces of the element and these electrodes are connected and fixed to a substrate 18 with an Ag epoxy layer 16. In this case, if the thermal expansion coefficient of substrate 18 is largely different from that of the crystal 10, a stress is applied to an interface between the crystal 10 and electrode 14 to change the property. Thereby, it becomes a high resistance layer due to disturbance of crystal structure and moreover a voltage applied on carrier collection is lowered, deteriorating the characteristic. Accordingly, deterioration of characteristic can be prevented and reliability can also be assured by using CdTe, glass and alumina, etc., like the detecting element as the substrate 18.
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