| 摘要 |
This invention provides a process for forming with high selectivity an Al film having good electrical conductivity at the uncoated portions of a substrate coated with a masking material by means of chemical vapor deposition, using an Al selective deposition material having good electrical conductivity without subjecting it preliminarily to cracking, characterized in that the process employs a molecular compound of trimethyl aluminum and dimethyl aluminum hydride as a starting material gas. This invention also provides an Al selective CVD material characterized in that it is an organic Al compound represented by the following formula: (CH3)3Al-(CH3)2AlH obtained through intermolecular binding between trimethyl aluminum and dimethyl aluminum hydride. This invention further provides a process for forming the Al selective CVD material which comprises mixing a liquid trimethyl aluminum with a liquid dimethyl aluminum hydride in an inert gas atmosphere, followed by vaccum distillation of the mixture to give the desired compound represented by the above formula.
|
