发明名称 |
Nonvolatile memory cell |
摘要 |
A floating gate is utilized which has two portions. A first portion overlies the channel region formed between the source and drain. The control gate overlies this portion of the floating gate and the remaining portion of the channel region forming an enhancement transistor. The second portion of the floating gate extends from the first portion over a thin oxide tunnel area of the source. An additional diode implant forming a junction with the drain region is provided to regulate the current flow through the drain, particularly during erasure.
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申请公布号 |
US5130769(A) |
申请公布日期 |
1992.07.14 |
申请号 |
US19910700837 |
申请日期 |
1991.05.16 |
申请人 |
MOTOROLA, INC. |
发明人 |
KUO, CLINTON C. K.;CHANG, KO-MIN |
分类号 |
G11C17/00;H01L21/8247;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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