| 摘要 |
A photosensor with improved performance is provided with a gate electrode structure for a field effect transistor that includes a semiconductor layer photosensitivity. The gate electrode can be constituted with a kind of metal or a low resistance semiconductor in conjunction with a semiconductor area with photosensitivity adjacent thereto. As a photosensitive semiconductor, amorphous silicon can be used because of its comparatively easy manufacturing method and its high sensitivity. As a field effect transistor, a thin film transistor of amorphous silicon can be used to correspond to the demand for making transistors over a large area. A MOSFET is preferably used as a field effect transistor for the improvement of sensitivity and speed of the sensor.
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