| 摘要 |
PURPOSE:To curtail the number of VIA holes and to improve the manufacturing yield by forming monolithically each transistor in the periphery centering around a certain one point, and connecting electrically prescribed electrodes of each transistor in this center part. CONSTITUTION:A multistage amplifier is constituted of two pieces of MESFETs (Schottky gate type FETs) l2, 15 formed on a semiconductor chip 11, and these respective FETs 12, 13 are formed monolithically so as to be opposed to the periphery of a center part of the semiconductor chip 11. Each FET 12, 13 is provided with source electrodes 12a, 13a, drain electrodes 12b, 13b and gate electrodes 12c, 13c. In such a state, each source electrode 12a, 13a is connected electrically to each other in the center part of the semiconductor chip 11 by source stubs 14, 15. In such a way, the number of VIA holes decreases, and the manufacturing yield is improved. |
