发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent etching residue of a metal wiring film on the side surface part of an interlayer insulating film, and prevent the generation of cracks in the interlayer insulating film occurring by impulsive force at the time of bonding, by forming a ring type part separated from a bonding pad part. CONSTITUTION:On a first metal wiring film, a first layer insulating film 3 is formed, and thereon a second metal wiring film 6 is formed wherein a gold- plated film 5 is formed by using a power supplying film 4. An aperture 8 is formed in a second interlayer insulating film 7 which is formed on the film 6 by coating. In the aperture 8, a bonding pad 11a is formed by using a third metal wiring 11 composed of a power supplying film 9 and a gold-plate film 10. At the same time, a ring type part 11b is formed so as to cover the side surface part 8a of the aperture 8 by using a part of the third metal wiring layer 11. Since the bonding pad part 11a is formed only in the inside of the aperture 8 in this manner, the force at the time of bonding is not applied to the second interlayer insulating film 7, and the generation of cracks in the second interlayer insulating film 7 can be prevented.</p>
申请公布号 JPH04192333(A) 申请公布日期 1992.07.10
申请号 JP19900318614 申请日期 1990.11.24
申请人 NEC CORP 发明人 KANO ISAO
分类号 H01L21/60;H01L21/3205;H01L23/485;H01L23/52;H01L23/538 主分类号 H01L21/60
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