| 摘要 |
PURPOSE:To suppress the peeling of a polycrystalline silicon film and a tungsten silicide film without decrease in the capacitance of a storage node by a method wherein the angle between the side wall of a conductive film constituting a storage node which faces a connection hole of a bit line and the surface of a semiconductor substrate is specified into a forward taper. CONSTITUTION:Out of side walls of a storage node 10, the angle between the side wall facing a connection hole 7 of a bit line and the surface of a semiconductor substrate 1 is made into a forward taper of 50 deg., thereby enabling the aspect ratio of a connection hole 17 of an n<+> diffusion layer 3 and a bit line 15 to be suppressed. Decrease in the capacitance of the storage node 10 can be kept minimum by specifying the angle between the other side wall and the surface of the semiconductor substrate 1 to 90 deg.. Thus, vacant holes 21 in a silicon oxide film 18, disconnection of a lower layer film and an upper layer film 16, and peeling of a lower layer film 15 of polycrystalline silicon and an upper layer film 16 of tungsten silicide can be suppressed with little decrease in the capacitance of the storage node 10. |
