METHOD AND DEVICE FOR FORMING PLASMA FILM

摘要

PURPOSE:To allow the uniform application of a film having excellent characteristics on a base material by disposing a hot plasma source having specific constitution in a vessel and activating the film forming elements supplied in the form of gases by hot plasma of high energy, thereby bringing these elements into reaction. CONSTITUTION:The hot plasma source 1 is disposed to face the base material 18 to be treated in the reduced pressure vessel 12 and is electrically connected by a transfer arc plasma power source 8. The pressure in the vessel 12 is reduced and a DC is impressed to a source 11 for auxiliary heating of a sample to heat the base material 18. A forming gas 3 is introduced to the hot plasma source 1 and the DC is generated between the cathode and anode of the hot plasma source 1 to generate a DC arc discharge which injects hot plasma flow 2 into the vessel 12. The base material is thus irradiated with this hot plasma flow. The treating gases 4a, 4b are introduced into the hot plasma source 1. The silicon carbide film having good quality is formed over the entire area of the surface of the base material 18.