发明名称 |
SILICON-BASED MASS AIRFLOW SENSOR |
摘要 |
<p>A mass airflow sensor is fabricated on a semiconductor substrate and which includes (1) a dielectric diaphragm, (2) p-etch-stopped silicon rim, (3) thin-film heating and temperature sensing elements, and (4) tapered chip edges. The dielectric diaphragm is formed with thin silicon oxide and silicon nitride in a sandwich structure and provides excellent thermal insulation for the sensing and heating elements of the sensor. The diaphragm dimensions, including thickness, are accurately controlled through the use of the heavily-p-doped silicon rim to help ensure uniform and reproducible sensor performance.</p> |
申请公布号 |
EP0393141(B1) |
申请公布日期 |
1992.07.08 |
申请号 |
EP19890901425 |
申请日期 |
1988.12.16 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUENCHEN |
发明人 |
LEE, KI WON;CHOI, IL-HYUN |
分类号 |
G01F1/68;G01F1/684;G01F1/692;G01L9/00;G01P5/10;G01P5/12 |
主分类号 |
G01F1/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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