| 发明名称 |
DEVICE HAVING A CHARGE TRANSFER DEVICE, MOSFETS, AND BIPOLAR TRANSISTORS -- ALL FORMED IN A SINGLE SEMICONDUCTOR SUBSTRATE |
| 摘要 |
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| 申请公布号 |
EP0443326(A3) |
申请公布日期 |
1992.07.08 |
| 申请号 |
EP19910100587 |
申请日期 |
1991.01.18 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAGUCHI, MINORU, C/O INTELLECTUAL PROPERTY DIV.;KIHARA, KAZUO, C/O INTELLECTUAL PROPERTY DIV. |
| 分类号 |
H01L21/761;H01L21/339;H01L21/8234;H01L21/8238;H01L27/06;H01L27/088;H01L27/092;H01L27/105;H01L27/146;H01L29/762;(IPC1-7):H01L27/06 |
主分类号 |
H01L21/761 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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