发明名称 BARRIERLESS HIGH-TEMPERATURE LIFT-OFF PROCESS FOR FORMING A PATTERNED INTERCONNECTION LAYER
摘要 <p>A lift-off metal deposition process in which a high temperature polyimide layer (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer. The two layers are anisotropically etched through a photoresist mask to form vias in the first polyimide layer. After application of a metal layer, the high-temperature polyimide layer is lifted off the first polyimide layer, which remains as a passivation layer.</p>
申请公布号 EP0200082(B1) 申请公布日期 1992.07.08
申请号 EP19860105142 申请日期 1986.04.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CLODGO, DONNA JEAN;PREVITI-KELLY, ROSEMARY ANN;WALTON, ERICK GREGORY
分类号 H01L21/3205;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;H05K3/14 主分类号 H01L21/3205
代理机构 代理人
主权项
地址