发明名称 |
BARRIERLESS HIGH-TEMPERATURE LIFT-OFF PROCESS FOR FORMING A PATTERNED INTERCONNECTION LAYER |
摘要 |
<p>A lift-off metal deposition process in which a high temperature polyimide layer (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer. The two layers are anisotropically etched through a photoresist mask to form vias in the first polyimide layer. After application of a metal layer, the high-temperature polyimide layer is lifted off the first polyimide layer, which remains as a passivation layer.</p> |
申请公布号 |
EP0200082(B1) |
申请公布日期 |
1992.07.08 |
申请号 |
EP19860105142 |
申请日期 |
1986.04.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLODGO, DONNA JEAN;PREVITI-KELLY, ROSEMARY ANN;WALTON, ERICK GREGORY |
分类号 |
H01L21/3205;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;H05K3/14 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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