| 摘要 |
<p>A process for fabricating a semiconductor device with a bipolar transistor structure is disclosed which eliminates the need for a field oxide isolation region between the collector contact region (18) and emitter of the transistor. An island of non-monocrystalline silicon is formed on top of the transistor structure partially covering the base (30) and collector contact regions. Ribbons of non-insulating material are formed along the sidewalls of the island (34,36). The ribbon over the base region is employed to form a narrow emitter region (40) with an annealing step that drives dopant from the ribbon or island into the portion of the base region below the ribbon. An insulating layer (15) is disposed between the transistor structure and the island and ribbon over the collector contact region to insulate the emitter from the collector. Insulating sidewall spacers (44,46) are formed next to the sidewall ribbons to insulate silicide regions grown over the base region, island and collector contact region for the three transistor contacts. <IMAGE></p> |
