TERMINATION OF THE POWER STAGE OF A MONOLITHIC SEMICONDUCTOR DEVICE AND ASSOCIATED MANUFACTURING PROCESS,申请号EP19910201245-传众专利搜索

发明名称	TERMINATION OF THE POWER STAGE OF A MONOLITHIC SEMICONDUCTOR DEVICE AND ASSOCIATED MANUFACTURING PROCESS
摘要
申请公布号	EP0459578(A3)	申请公布日期	1992.07.08
申请号	EP19910201245	申请日期	1991.05.25
申请人	SGS-THOMSON MICROELECTRONICS S.R.L.;CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO	发明人	ZAMBRANO, RAFFAELE;GRIMALDI, ANTONIO
分类号	H01L21/8249;H01L21/76;H01L27/06;H01L27/088;H01L29/78;(IPC1-7):H01L27/06	主分类号	H01L21/8249
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