发明名称 SELECTIVE ETCHING METHOD OF LAMINAR STRUCTURE
摘要 PURPOSE:To increase thermosoftening property and thermal plasticity of a resist, by wholly exposing this resist, before the heat treatment is applied to the positive-type resist. CONSTITUTION:The first layer 2 is etched, using a positive-type photoresist 1 as a mask. Then ultraviolet rays are applied to the entire face of resist 1. This increases thermosoftening property and thermal plasticity of the resist 1. Then, by applying heat treatment to the resist 1, the overhang part hangs down because of thermal plasticity and sticks to the side of an opening, to form a new mask 4'. Then, by etching the second layer an opening is made in the second layer 3 without any overhang in layer 2.
申请公布号 JPS56131929(A) 申请公布日期 1981.10.15
申请号 JP19800035061 申请日期 1980.03.19
申请人 FUJITSU LTD 发明人 SHIGEMATSU KAZUMASA
分类号 H01L21/306;G03F7/20;G03F7/40;H01L21/027 主分类号 H01L21/306
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