On-chip variance detection for integrated circuit devices.

摘要

A process variance detection technique for detecting fabrication processing variances in integrated circuit components, such as resistors or MOSFETs, is based on the decreased sensitivity to processing variations exhibited by components that are up-sized relative to similar components with nominal dimensions. Detection circuitry includes detection components with both nominal and up-sized dimensions, and variance detection involves detecting the differences in operational response of the nominal and up-sized detection components. For bipolar logic, resistors are fabricated with up-sized widths, while for MOS logic, MOSFETs are fabricated with up-sized gate lengths.