发明名称 |
Silicon mesa transistor structure |
摘要 |
A silicon on insulator transistor employs a thick field insulator overlapping silicon mesas, the overlap area beneath the interface between the transistor gate and the sidewall being doped to increase the threshold for parasitic transistors above that of the transistor.
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申请公布号 |
US5128733(A) |
申请公布日期 |
1992.07.07 |
申请号 |
US19910701738 |
申请日期 |
1991.05.17 |
申请人 |
UNITED TECHNOLOGIES CORPORATION |
发明人 |
TYSON, SCOTT M. |
分类号 |
H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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