发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PURPOSE:To enable a blue light emitting element of DH structure to be obtained by a method wherein Zn1-xCdxS multilayer structured layers different in composition ratio (x) are formed on a singlecrystal substrate, an active layer containing Zn and Se is provided thereon, and Zn1-xCdxS multilayer structured layers are formed thereon. CONSTITUTION:A distortion superlattice layer composed of Zn1-xCdxS multilayer structured layers 22 different in composition ratio (x) is formed on a single- crystal substrate 21, an active layer 23 containing Zn and Se is provided thereon, and a Zn1-xCdxS multilayer structured layer 24 is formed thereon, where the multilayer structured layers 22 and 24 are made to function as clad layers. The compositional ratio Zn:Cd of ZnCdS is so set as to enable the average lattice constant of the distortion superlattice layers 22 and 24 to be nearly coincident with that of the active layer 23 and the distortion layers 22 and 24 to have a larger forbidden width than the active layer 23. By this setup, a double-hetero structure (DH structure) can be realized, and in result a blue light emitting element can be obtained.
申请公布号 JPH04188679(A) 申请公布日期 1992.07.07
申请号 JP19900314710 申请日期 1990.11.19
申请人 RICOH CO LTD;RICOH RES INST OF GEN ELECTRON 发明人 KONDO HIROSHI;SATO SHIRO
分类号 H01L33/06;H01L33/12;H01L33/14;H01L33/28;H01L33/30;H01L33/40 主分类号 H01L33/06
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