SEMICONDUCTOR DEVICE WITH CURRENT BLOCKING LAYER

摘要

A semiconductor device having a current blocking layer and current confinement window formed in a semiconductor layer, and an electrode metal layer disposed on said current blocking layer and current confinement window, wherein the current blocking layer is made of semiconductor material, and the contact resistance of the current blocking layer and the electrode metal layer is higher than the contact resistance of the electrode metal layer and the semiconductor layer, and/or the resistivity of the current blocking layer is higher than that of the semiconductor layer.