| 摘要 |
PURPOSE:To lower the specific resistance at a normal temperature by a method wherein specific material is added to the composition formed by having the barium atoms of 5 to 20mol% of barium titanate replaced with strontium. CONSTITUTION:Sb2O3 and Ta2O5 of 0.1 to 0.25mol% in total, SiO2 of 0.5 to 1.0mol%, TiO2 of 0.5 to 2.0mol%, and MnO of 0.03 to 0.10mol% are added to the composition of 100mol% which is formed by having the barium atoms of 5 to 20mol% of barium titanate replaced with strontium. Besides, Cl of 0.01 to 0.15mol% is contained in the composition of 100mol% in which no adding material is contained. As a result, the specific resistance at the normal temperature is low, and a barium titanate semiconductor porcelain, having the specific resistance at the normal temperature and a relatively large positive resistance temperature, can be obtained. |
