| 摘要 |
PURPOSE:To facilitate the design of pattern, etc., by enclosing the main masking pattern by a protective pattern with the width smaller than the minimum width of the former pattern to exclude an effect of etching on the outermost main masking pattern. CONSTITUTION:The masking pattern for etching is formed with a main masking pattern 3 and a protective masking pattern 4 enclosing the pattern 3. The width B of the protective masking pattern 4 is made smaller than the width A of the main masking pattern 3. At the time the part covered by the pattern 3 is eroded from its side face to the planned shape to be left, the part covered by the pattern 4 falls off by the erosion from its side face. A direct effect of a liq. etchant on the outermost pattern 3 is excluded. |
