| 摘要 |
PURPOSE:To improve an alpha-ray resistance, to reduce a leakage current, and to realize excellent information holding characteristic by forming elements of an entire CMOS type circuit on an insulating film, and forming all transistors on a single crystal. CONSTITUTION:A gate electrode 9 commonly takes gate potentials of a P- channel transistor and an N-channel transistor, and is patterned so as to expose single crystalline silicon. An interlayer insulating film 13 is provided, a contact hole 14 is provided, and a gate electrode 9 opposed by using a wiring material such as silicide 15, etc., is electrically connected to an N-type high concentration impurity diffused layer 11 and a P-type high concentration impurity diffused layer 12. Then, an interlayer insulating film 16 is provided, and a contact hole 17 is provided. A single crystalline silicon film 18 is grown from the hole 17. The film 18 is patterned, and formed in an attitude for separating the single crystalline grown hole 17 from the silicide 15 wiring side. Then, a gate oxide film 19 is provided, a gate electrode 20 is provided, a sidewall 21 is provided, and an N-type high concentration impurity diffused layer 22 is provided to form a transfer transistor. |
