发明名称 |
LEVEL SHIFT CIRCUIT |
摘要 |
The level shifting circuit using GaAs enhancement and depletion type MESFET has good operating characteristics regardless of the critical voltage variation. The circuit comprises an enhancement type MESFET (J11) for receiving input signal through a gate, a depletion type MESFET (J12) connected to the MESFET (J11), an enhancement type MESFET (J13) connected to the depletion type MESFET (J12), and resisters (R1,R2) for dividing voltage (VSS).
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申请公布号 |
KR920005360(B1) |
申请公布日期 |
1992.07.02 |
申请号 |
KR19890018296 |
申请日期 |
1989.12.11 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
LEE, CHANG - SUOK;YUN, KWANG - JUN;PARK, HYONG - MU;MA, DONG - SONG |
分类号 |
H03K19/00;(IPC1-7):H03K19/00 |
主分类号 |
H03K19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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