DETECTING METHOD AND APPARATUS OF EDGE PATTERN FOR THE WAFER

摘要

The method for detecting wafer edge pattern for testing the transistor and IC characteristics comprises generating the address signal of each memory by counting the generated moving pulse when the chuck is shifted toward the X and Y axes at probe station; computating the data related with the wafer movement distance from the center of wafer located on the chuck to the moved point toward X direction; computating the data related with the distance from any point moved toward the Y direction at wafer center to wafer edge of X direction in memory device; computating the data related with the distance from any point moved toward Y direction to the assumed standard circle; controlling the test operation of the probe station.