| 摘要 |
PURPOSE:To obtain same film characteristics under constant film forming conditions by a method wherein an Al-Si target is manufactured by a cast alloy method. CONSTITUTION:In order to manufacture an Al-Si alloy target, a cast alloy method is employed. First, 70 at.% of Si is put into a crucible and heated to 1500 deg.C in a vacuum melting furnace and then 30 at.% of Al is put into the crucible and Al and Si are naturally mixed under a constant temperature of 1500 deg.C and cast into a mold. At that time, crystal grains are distributed uniformly over the whole surface and, moreover, as the target is made of cast alloy, the density is 100%, which is very convenient for sputtering. With this constitution, the same film characteristics can be obtained under constant film forming conditions and density unevenness and variation can be avoided. |
