Dynamic random access memory.

摘要

A dynamic random access memory according to the present invention comprises a voltage stress test pad (22) to which a stress voltage is externally applied when a voltage stress test is carried out, transistors (24) which turn off when the stress voltage is not applied to the voltage stress test pad and which, when the stress voltage is applied thereto, transmit the stress voltage to more word lines than those selected in response to an external address signal in a normal operation mode, and a noise killer control circuit (38) for turning off a noise killer circuit (24) connected to a word line to which the stress voltage is applied when the voltage stress test is carried out. <IMAGE>