Non-linear optical device having an improved rate for recovery.

摘要

A non-linear optical device having the TBQ structure comprises an active layer (A4) forming a quantum well for interacting with an incident optical beam, an electron removal layer (A6) provided adjacent to the active layer at a first side thereof with a first barrier layer (A5) intervening therebetween for removing the electrons from the active layer; and a hole removal layer (A2) provided adjacent to the active layer at a second, opposite side of the active layer with a second barrier layer (A3) intervening therebetween for removing the holes from the active layer; wherein the first and second barrier layers (A3, A5) have respective thicknesses determined such that the probability of tunneling of the electrons through the first barrier layer and the probability of tunneling of the holes through the second barrier layer are substantially equal with each other.