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发明名称
SCHOTKKY BARRIER JUNCTION GATE FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURE
摘要
申请公布号
JPH04184941(A)
申请公布日期
1992.07.01
申请号
JP19900315324
申请日期
1990.11.20
申请人
NEC CORP
发明人
KATANO FUMIAKI
分类号
H01L29/812;H01L21/338
主分类号
H01L29/812
代理机构
代理人
主权项
地址
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