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发明名称
WORKING METHOD FOR SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPH04184929(A)
申请公布日期
1992.07.01
申请号
JP19900315102
申请日期
1990.11.20
申请人
HITACHI LTD
发明人
UKAI SEIICHI;SHIMADA SATOSHI
分类号
C23F1/00;C23F1/02;H01L21/306;H01L21/3063
主分类号
C23F1/00
代理机构
代理人
主权项
地址
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