发明名称 RESIST PATTERN FORMING METHOD
摘要 PURPOSE:To prevent deterioration of resolution due to swelling by dissolving a resin obtained by hydrolyzing, dehydrating, and polycondensing a specified organosilicon compound together with an acid generating agent in an organic solvent, coating the substrate to be processed to form a negative type resist, patternwise exposing it to ionizing radiation, and developing it with an organic solvent. CONSTITUTION:The organosilicon compound of formula I or II is hydrolized, dehydrate, and polycondensed, the obtained resin and the acid-generating are dissolved in the organic solvent, the substrate to be processed is coated with the obtained coating material to form the negative type resist, and it is patternwise exposed to ionizing radiation, and developed with the organic solvent. In formulae I and II, each of R<1> and R<2> is independently alkyl or aryl; and X is halogen, thus permitting oxygen plasma resistance to be enhanced by using the organosilicon compound high in silicon content, cross-linking density to be elevated by properly controlling an amount of silanol groups in a processing step, and accordingly, swelling occurring at the time of development to be reduced.
申请公布号 JPH04184445(A) 申请公布日期 1992.07.01
申请号 JP19900314578 申请日期 1990.11.20
申请人 FUJITSU LTD 发明人 OIKAWA AKIRA;WATABE KEIJI;NAMIKI TAKAHISA;FUKUDA MANAMI
分类号 G03F7/075;H01L21/027;H01L21/30 主分类号 G03F7/075
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