发明名称 PRODUCTION OF PHOTOSENSITIVE HEAT RESISTANT RESIN COMPOSITION AND SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a photosensitive resin compsn. not causing cracking at the time of heat treatment by using a resin represented by a specified formula and enabling the formation of a negative pattern by irradiation with UV rays. CONSTITUTION:A resin represented by formula I is used and the formation of a negative type pattern by irradiation with UV rays is enabled. In the formula I, each R<1> is 1-3C lower alkyl or aryl, plural R<1>'s may be different from each other, >=20% of plural R<2>'s are ethylene oxide, the remainder is vinyl, lower alkyl or aryl and each of n, m and l is a positive integer. The resin can satisfy both photosensitivity and heat resistance because it contains ethylene oxide as mentioned above and a photosensitive heat resistant resin compsn. not causing cracking at the time of heat treatment is obtd.
申请公布号 JPH04184444(A) 申请公布日期 1992.07.01
申请号 JP19900314574 申请日期 1990.11.20
申请人 FUJITSU LTD 发明人 FUKUYAMA SHUNICHI;YAMAGAMI MASAAKI;KOBAYASHI TOMOKO
分类号 G03F7/075;C08G77/06;C08G77/14;C08G77/20;C08G77/22;C08L83/04;C08L83/06;C08L83/07;C09D183/04;C09D183/06;C09D183/07;G03F7/11;H01L21/027;H01L21/312 主分类号 G03F7/075
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