| 摘要 |
<p>A submicron channel length is achieved in cells having sharp corners, such as square cells, by blunting the corners of the cells. In this way, the three dimensional diffusion effect is minimized, and punch through is avoided. Techniques are discussed for minimizing defects in the shallow junctions used for forming the short channel, including the use of a thin dry oxide rather than a thicker steam thermal over the body contact area, a field shaping p+ diffusion to enhance breakdown voltage, and TCA gettering. Gate-source leakage is reduced with extrinsic gettering on the poly backside, and intrinsic gettering due to the choice of starting material. <IMAGE></p> |
