| 摘要 |
PURPOSE:To surely form ohmic electrodes with high reproducibility and, at the same time, to realize low-resistance contact by vapor depositing Cr electrodes on the n-type ZnSe film of a semiconductor light emitting element and annealing the Cr electrodes in a non-oxidative atmosphere at 400 deg.C. CONSTITUTION:A semiconductor element 5 is formed by forming a pair of Cr electrodes on an n-type ZnSe film 8 doped with iodine by means of a vacuum deposition device after the film 8 is formed on a GaAs substrate 7 by epitaxial growth by using an Mo-CVD device. Then the element 5 is placed in an anneal treatment device for heat treatment. The anneal treatment device is constituted of a quartz container 1, susceptor 2, atmospheric gas leading-in and discharging ports 3 and 4, and heater 6 and, after the element 5 is placed on the suscetor 2, the heater 6 is adjusted while a non-oxidizing gas is introduced into the container 1 through the port 3. The anneal treatment is performed for one minute each by setting the atmospheric temperature at 200 deg.C, 400 deg.C, and 450 deg.C in each stage. By the anneal treatment of <=400 deg.C, ohmic electrodes are surely obtained with high reproducibility and low-resistance contact can be realized. |
