Noise reduction technique for breakdown diodes.

摘要

A device including a first semiconductor PN junction (16) which is reverse biased to operate in the avalanche breakdown region. A second semiconductor PN junction (20) is biased to operate in the forward active region such that carriers are injected through the second semiconductor PN junction and diffuse to the first semiconductor PN junction wherein the noise generated from the first semiconductor PN junction operating in the avalanche breakdown region is substantially reduced. <IMAGE>