Method of making memory devices utilizing one-sided ozone teos spacers

摘要

The present invention provides a programmable structure for a programmable read-only memory (PROM) which utilizes one-sided ozone spacers constructed on the digit lines as one time programmable nodes. An oxide/nitride/oxide layer (ONO) is used as an interface between underlying parallel rows of digit lines, having one-sided ozone spacers, and overlying parallel columns of word lines in a programmable read only memory. With a each digit line passing under each word line in a row/column matrix is formed thereby providing a programmable digit/word line matrix. Each crossing point of the digit and word lines in the matrix will be permanently programmed to either a one or a zero by rupturing the thin ONO dielectric interface by applying the appropriate voltage potential between the associated digit/word line conductors.