发明名称 |
CMOS VOLTAGE REFERENCE WITH STACKED BASE-TO-EMITTER VOLTAGES |
摘要 |
A band-gap voltage reference forming part of a CMOS IC chip. A DELTA VBE voltage is developed by stacked pairs of parasitic bipolar transistors, with the transistors of each pair operated at different current densities. MOS buffer transistors are connected at corresponding ends of the stacks where the DELTA VBE voltage is developed. The bipolar transistors are driven by MOS current sources.
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申请公布号 |
US5126653(A) |
申请公布日期 |
1992.06.30 |
申请号 |
US19900590655 |
申请日期 |
1990.09.28 |
申请人 |
ANALOG DEVICES, INCORPORATED |
发明人 |
GANESAN, APPARAJAN;LIBERT, ROBERT J. |
分类号 |
G05F3/20;G05F3/30;H03K5/08 |
主分类号 |
G05F3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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