发明名称 |
Photoelectric converter with doped capacitor region |
摘要 |
A photoelectric converter made of a semiconductor transistor of the type that the potential of a control electrode region is controlled through a capacitor, wherein the capacitor is constructed such that the capacitor electrode faces the control electrode region with an insulating layer interposed therebetween, and at least the portion of the control electrode region which faces said capacitor electrode is a region having a high impurity density.
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申请公布号 |
US5126814(A) |
申请公布日期 |
1992.06.30 |
申请号 |
US19910758399 |
申请日期 |
1991.09.04 |
申请人 |
TOKYO, JAPAN CANON KABUSHIKI KAISHA |
发明人 |
ZAKAMURA, YOSHIO;OHZU, HAYAO |
分类号 |
H01L27/146;H01L31/11 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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