发明名称 Photoelectric converter with doped capacitor region
摘要 A photoelectric converter made of a semiconductor transistor of the type that the potential of a control electrode region is controlled through a capacitor, wherein the capacitor is constructed such that the capacitor electrode faces the control electrode region with an insulating layer interposed therebetween, and at least the portion of the control electrode region which faces said capacitor electrode is a region having a high impurity density.
申请公布号 US5126814(A) 申请公布日期 1992.06.30
申请号 US19910758399 申请日期 1991.09.04
申请人 TOKYO, JAPAN CANON KABUSHIKI KAISHA 发明人 ZAKAMURA, YOSHIO;OHZU, HAYAO
分类号 H01L27/146;H01L31/11 主分类号 H01L27/146
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