发明名称 Superconducting device
摘要 A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic. In an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is incredible by furnishing a varied impurity distribution in the semiconductor layer.
申请公布号 US5126801(A) 申请公布日期 1992.06.30
申请号 US19890412201 申请日期 1989.09.25
申请人 HITACHI, LTD. 发明人 NISHINO, TOSHIKAZU;MIYAKE, MUTSUKO;KAWABE, USHIO;HARADA, YUTAKA;AOKI, MASAAKI;HIRANO, MIKIO
分类号 H01L21/82;H01L39/22 主分类号 H01L21/82
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